发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a high-withstand-voltage diode.SOLUTION: A semiconductor device includes: a semiconductor substrate; a first diffusion region of a first conductivity type formed in the semiconductor substrate; a second diffusion region of a second conductivity type being the opposite conductivity type to the first conductivity type, formed in the first diffusion region; a third diffusion region of the first conductivity type formed in the second diffusion region; a first wiring pattern formed on the semiconductor substrate, receiving a first voltage, and connected to the second diffusion region; and a second wiring pattern formed on the semiconductor substrate and receiving a second voltage higher than the first voltage. The second and third diffusion regions form a diode by pn junction, and a conductive pattern that intersects with the second wiring pattern in a plan view and receives the first voltage is provided between the second diffusion region and the second wiring pattern. |
申请公布号 |
JP2014027167(A) |
申请公布日期 |
2014.02.06 |
申请号 |
JP20120167444 |
申请日期 |
2012.07.27 |
申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
TAKADA KAZUHIKO;TAKI YUJIRO |
分类号 |
H01L29/861;H01L21/768;H01L21/822;H01L21/8234;H01L21/8238;H01L23/522;H01L27/04;H01L27/06;H01L27/092;H01L29/868 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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