发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a high-withstand-voltage diode.SOLUTION: A semiconductor device includes: a semiconductor substrate; a first diffusion region of a first conductivity type formed in the semiconductor substrate; a second diffusion region of a second conductivity type being the opposite conductivity type to the first conductivity type, formed in the first diffusion region; a third diffusion region of the first conductivity type formed in the second diffusion region; a first wiring pattern formed on the semiconductor substrate, receiving a first voltage, and connected to the second diffusion region; and a second wiring pattern formed on the semiconductor substrate and receiving a second voltage higher than the first voltage. The second and third diffusion regions form a diode by pn junction, and a conductive pattern that intersects with the second wiring pattern in a plan view and receives the first voltage is provided between the second diffusion region and the second wiring pattern.
申请公布号 JP2014027167(A) 申请公布日期 2014.02.06
申请号 JP20120167444 申请日期 2012.07.27
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 TAKADA KAZUHIKO;TAKI YUJIRO
分类号 H01L29/861;H01L21/768;H01L21/822;H01L21/8234;H01L21/8238;H01L23/522;H01L27/04;H01L27/06;H01L27/092;H01L29/868 主分类号 H01L29/861
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