发明名称 |
Epitaxially Thickened Doped or Undoped Core Nanowire FET Structure and Method for Increasing Effective Device Width |
摘要 |
Techniques for increasing effective device width of a nanowire FET device are provided. In one aspect, a method of fabricating a FET device is provided. The method includes the following steps. A SOI wafer is provided having an SOI layer over a BOX, wherein the SOI layer is present between a buried nitride layer and a nitride cap. The SOI layer, the buried nitride layer and the nitride cap are etched to form nanowire cores and pads in the SOI layer in a ladder-like configuration. The nanowire cores are suspended over the BOX. Epitaxial sidewalls are formed over the sidewalls of the nanowires cores. The buried nitride layer and the nitride cap are removed from the nanowire cores. A gate stack is formed that surrounds at least a portion of each of the nanowire cores and the epitaxial sidewalls. |
申请公布号 |
US2014034908(A1) |
申请公布日期 |
2014.02.06 |
申请号 |
US201213596234 |
申请日期 |
2012.08.28 |
申请人 |
BANGSARUNTIP SARUNYA;COHEN GUY;LIN CHUNG-HSUN;SLEIGHT JEFFREY W.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BANGSARUNTIP SARUNYA;COHEN GUY;LIN CHUNG-HSUN;SLEIGHT JEFFREY W. |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|