Method for manufacturing DCB substrate for e.g. power semiconductor component in power converter, involves electroplating metal film on metallization layer and around cover so as to form pocket at desired position of power component

摘要

The method involves providing an electrically non-conductive insulating material body (1). A structured electrically conductive metallization layer (2a) is applied on a side (15a) of the body. An electrically non-conductive cover (3) is applied on the metallization layer at a desired position of a power semiconductor component. A metal film is electroplated on the metallization layer and around the cover so as to form a pocket at a desired position of the semiconductor component. The cover is removed. Independent claims are also included for the following: (1) a substrate for a power semiconductor component (2) a power semiconductor module.