发明名称 Methods For Making A Mask For An Integrated Circuit Design
摘要 A method for making a mask for an integrated circuit (IC) design includes receiving an IC design layout having a plurality IC features and performing a targeted-feature-surrounding (TFS) checking operation to identify a targeted-feature-surrounding-location (TFSL) in the IC design layout. The method also includes inserting a phase-bar (PB) to the TFSL, performing an optical proximity correction (OPC) to the IC design layout having the PB to form a modified IC design layout and providing the modified IC design layout for fabrication of the mask.
申请公布号 US2014040838(A1) 申请公布日期 2014.02.06
申请号 US201213564019 申请日期 2012.08.01
申请人 LIU RU-GUN;CHOU SHUO-YEN;NG HOI-TOU;HSIEH KEN-HSIEN;CHEN YI-YIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIU RU-GUN;CHOU SHUO-YEN;NG HOI-TOU;HSIEH KEN-HSIEN;CHEN YI-YIN
分类号 G06F17/50 主分类号 G06F17/50
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