发明名称 ELECTRONIC MEMORY DEVICE
摘要 An electronic device includes a first electrode, a second electrode, and a solid electrolyte made of an ion-conducting material, the first and second electrodes being configured to form a metal dendrite. The device further includes a third electrode, an interface layer contacting the third electrode and a third surface of the electrolyte, the interface layer being an ionic insulator and an electronic insulator. The third electrode and the dendrite are arranged such that the device has two resistive states.
申请公布号 US2014034895(A1) 申请公布日期 2014.02.06
申请号 US201214003309 申请日期 2012.03.07
申请人 SINGH PAWAN;COMMISSARIAT A L' ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 发明人 SINGH PAWAN
分类号 H01L45/00 主分类号 H01L45/00
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