METHOD OF FORMING FIN-FIELD EFFECT TRANSISTOR (finFET) STRUCTURE

摘要

Various embodiments include methods of forming semiconductor structures. In one embodiment, a method includes: providing a precursor structure including a substrate and a set of fins overlying the substrate; forming a dummy epitaxy between the fins in the set of fins; masking a first group of fins in the set of fins and the dummy epitaxy between the first group of fins in the set of fins; removing the dummy epitaxy to expose a second group of the fins; forming a first in-situ doped epitaxy between the exposed fins; masking the second group of fins in the set of fins and the in-situ doped epitaxy between the second group of fins in the set of fins; unmasking the first group of fins; removing the dummy epitaxy layer between the first group of fins to expose of the first group of fins; and forming a second in-situ doped epitaxy between the exposed fins.