| 摘要 |
A method for reducing defects from at least one active layer is disclosed, the active layer being part of a semiconductor in a device, and the active layer at least laterally being defined by an isolation structure and being physically in contact therewith by means of a contact interface, the isolation structure and the active layer(s) abutting on a common substantially planar surface;
- providing a patterned stress inducing layer on the common substantially planar surface, the stress inducing layer being adapted for inducing a stress field in the active layer, the induced stress field resulting in a shear stress on defects present in the active layer;
- performing an anneal step;
to thereby induce a movement of the defects towards the contact interface; and
removing the patterned stress inducing layer from the common substantially planar surface. |
