发明名称 |
NITRIDE BASED TRANSISTOR AND METHOD OF FABRICATING THE SAME |
摘要 |
Disclosed are a nitride based transistor and a method of fabricating the same. The nitride based transistor includes an upper surface, a lower surface, a slope connected from the upper surface to the lower surface, a semiconductor stack structure including a nitride based semiconductor layer, and a first regrowth layer formed on a part of the slope. The first regrowth layer is made of a nitride based semiconductor layer. The composition of the first regrowth layer is different from that of the nitride based semiconductor layer in a part of a lower slope. Thereby, a vertical-type nitride based transistor using a heterojunction structure of the semiconductor stack structure and the first regrowth layer can be provided. |
申请公布号 |
KR20140013193(A) |
申请公布日期 |
2014.02.05 |
申请号 |
KR20120079277 |
申请日期 |
2012.07.20 |
申请人 |
SEOUL SEMICONDUCTOR CO., LTD. |
发明人 |
TAKEYA MOTONOBU;LEE, KANG NYUNG;LEE, KWAN HYUN |
分类号 |
H01L29/778;H01L21/335 |
主分类号 |
H01L29/778 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|