ETCHANT AND MANUFACTURING METHOD OF METAL WIRING AND THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME

摘要

Provided is an etchant composition. According to an embodiment of the present invention specification, an etchant composition comprises: 0.5-20 wt% of pursulfate; 0.5-0.9 wt% of ammonium fluoride; 1-10 wt% of inorganic acid; 0.5-5 wt% of ring type amine compound; 0.1-10 wt% of sulfonic acid; 5-10 wt% of organic acid or its base; and water which makes the total weight to be 100 wt%. The etchant composition etches a metal film containing copper and titanium to form a metal wire or to be used for manufacturing a thin film transistor array panel. [Reference numerals] (AA) Comparative example 3; (BB) Example 1