| 摘要 |
<p>According to the present invention, a method for forming a semiconductor device includes a step of forming a pillar by etching a semiconductor substrate, a step of forming a sacrificial insulating layer pattern covering one side of the pillar, a step of forming a mask insulating layer by burying a gap between the sacrificial insulating layers, a step of removing the sacrificial insulating layer, and a step of forming the open region of a sidewall contact by using the mask insulating layer as a mask. The error of a post process can be reduced by easily forming a sidewall contact without the loss of a hard mask pattern in a semiconductor device including a vertical type gate.</p> |
