MEMORY DEVICE, MEMORY SYSTEM AND METHOD OF CONTROLLING A READ VOLTAGE OF THE MEMORY DEVICE

摘要

A memory device according to the technical object of the present invention includes a memory cell array which includes a plurality of memory cells and a page buffer unit which performs the logic operation of read data based on reading directions in the different voltage levels and data which is successively read in different voltage levels with regard to the memory cells. [Reference numerals] (10A) Memory controller; (11) ECC processor; (12) Read voltage control unit; (20A) Memory device; (21) Memory cell array; (22) Page buffer unit