MEMORY DEVICE, MEMORY SYSTEM AND METHOD OF CONTROLLING A READ VOLTAGE OF THE MEMORY DEVICE

摘要

A memory device according to technological aspects of the present invention comprises: a memory cell array including a plurality of memory cells; a page buffer unit which stores each of sequentially read data from different voltage levels into some memory cells of the plurality of memory cells individually, and includes a plurality of page buffers each performing logical operations for the data; and a counting unit for counting a number of the memory cells present in each of a plurality of sections separated by the different voltage levels based on a result of the logical operations. [Reference numerals] (10A) Memory controller; (11) ECC processor; (12) Read voltage determination unit; (20A) Memory device; (21) Memory cell array; (22) Page buffer; (23) Counting unit