发明名称 EPITAXIAL REACTOR
摘要 According to an embodiment of the present invention, an epitaxial reactor includes a susceptor holding a wafer; a susceptor support shaft supporting the susceptor; a lift pin selectively supporting the wafer, and moving up and down by penetrating a pin hole formed in the susceptor; a lift pin support shaft elevating the lift pin; and a pin guide member capable of being combined with the susceptor and having a hole allowing penetration of the lift pin.
申请公布号 KR20140013239(A) 申请公布日期 2014.02.05
申请号 KR20120079759 申请日期 2012.07.23
申请人 LG SILTRON INCORPORATED 发明人 HAN, YONG SOO
分类号 H01L21/20;H01L21/02 主分类号 H01L21/20
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