发明名称 Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal
摘要 Provided is a manufacturing device of an aluminum nitride single crystal including a crucible. An aluminum nitride raw material and a seed crystal are stored in an inner portion of the crucible. The seed crystal is placed so as to face the aluminum nitride raw material. The crucible includes an inner crucible and an outer crucible. The inner crucible stores the aluminum nitride raw material and the seed crystal inside the inner crucible. The inner crucible is also corrosion resistant to a sublimation gas of the aluminum nitride raw material. The inner crucible includes either, a single body of a metal having an ion radius larger than an ion radius of an aluminum, or includes a nitride of the metal. The outer crucible includes a boron nitride. The outer crucible covers the inner crucible.
申请公布号 US8641821(B2) 申请公布日期 2014.02.04
申请号 US201113278839 申请日期 2011.10.21
申请人 KATOU TOMOHISA;NAGAI ICHIROU;MIURA TOMONORI;KAMATA HIROYUKI;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY;FUJIKURA LTD. 发明人 KATOU TOMOHISA;NAGAI ICHIROU;MIURA TOMONORI;KAMATA HIROYUKI
分类号 C01B21/072;A23G3/24;C30B11/00;C30B23/00 主分类号 C01B21/072
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