| 发明名称 |
Reactor designs for use in ammonothermal growth of group-III nitride crystals |
| 摘要 |
Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals. |
| 申请公布号 |
US8641823(B2) |
申请公布日期 |
2014.02.04 |
| 申请号 |
US200913128083 |
申请日期 |
2009.11.04 |
| 申请人 |
PIMPUTKAR SIDDHA;KAMBER DERRICK S.;SPECK JAMES S.;NAKAMURA SHUJI;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
PIMPUTKAR SIDDHA;KAMBER DERRICK S.;SPECK JAMES S.;NAKAMURA SHUJI |
| 分类号 |
C30B7/10;B01D9/00;C30B29/40 |
主分类号 |
C30B7/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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