Solid-state image-sensing device having a plurality of controlled pixels, with each pixel having a transfer gate signal that is ternary-voltage signal switched among three levels, and method of operating same

摘要

By feeding an appropriate voltage as a signal phiTX to a transfer gate TG, a MOS transistor T1 is operated in a threshold region. A potential linearly or natural logarithmically converted by a buried photodiode PD is transferred to an N-type floating diffusion layer FD so as to be fed out, as an image signal, via MOS transistors T3 and T4.