发明名称 Through substrate via including variable sidewall profile
摘要 A microelectronic structure, such as a semiconductor structure, and a method for fabricating the microelectronic structure, include an aperture within a substrate. Into the aperture is located and formed a via. The via may include a through substrate via. The aperture includes, progressing sequentially contiguously at least partially through the substrate: (1) a first comparatively wide region at a surface of the substrate; (2) a constricted region contiguous with the first comparatively wide region; (3) a second comparatively wide region contiguous with the constricted region; and (4) a tapered region contiguous with the second comparatively wide region. The structure of the aperture provides for ease in filling the aperture, as well as void isolation within the via that is filled into the aperture.
申请公布号 US8643190(B2) 申请公布日期 2014.02.04
申请号 US20100955429 申请日期 2010.11.29
申请人 COONEY, III EDWARD CRANDAL;LINDGREN PETER JAMES;OSSENKOP DOREEN JANE;STAMPER ANTHONY KENDALL;ULTRATECH, INC. 发明人 COONEY, III EDWARD CRANDAL;LINDGREN PETER JAMES;OSSENKOP DOREEN JANE;STAMPER ANTHONY KENDALL
分类号 H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/48
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