发明名称 |
Semiconductor device and method of manufacturing a semiconductor device |
摘要 |
A semiconductor device and a method of manufacturing a gate stack for such a semiconductor device. The device includes a gate stack that has a gate insulation layer provided over a channel region of the device, and a metal layer that is insulated from the channel region by the gate insulation layer. The metal layer contains work function modulating impurities which have a concentration profile that varies along a length of the metal layer from the source region to the drain region. The gate stack has a first effective work function in the vicinity of a source region and/or the drain region of the device and a second, different effective work function toward a center of the channel region. |
申请公布号 |
US8643121(B2) |
申请公布日期 |
2014.02.04 |
申请号 |
US200913143762 |
申请日期 |
2009.11.23 |
申请人 |
MUELLER MARKUS;SINGANAMALLA RAGHUNATH;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
MUELLER MARKUS;SINGANAMALLA RAGHUNATH |
分类号 |
H01L21/70 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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