| 发明名称 |
Semiconductor device including multiple insulating films |
| 摘要 |
A semiconductor display device is formed including an interlayer insulating. Specifically, a TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT. |
| 申请公布号 |
US8643021(B2) |
申请公布日期 |
2014.02.04 |
| 申请号 |
US201213371524 |
申请日期 |
2012.02.13 |
| 申请人 |
YAMAZAKI SHUNPEI;MURAKAMI SATOSHI;HAYAKAWA MASAHIKO;KATO KIYOSHI;OSAME MITSUAKI;HIROSURE TAKASHI;FUJIKAWA SAISHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;MURAKAMI SATOSHI;HAYAKAWA MASAHIKO;KATO KIYOSHI;OSAME MITSUAKI;HIROSURE TAKASHI;FUJIKAWA SAISHI |
| 分类号 |
H01L29/04;H01L51/50;G09F9/30;H01L21/312;H01L21/316;H01L21/318;H01L21/336;H01L21/77;H01L21/84;H01L23/48;H01L23/52;H01L27/12;H01L27/13;H01L27/32;H01L29/10;H01L29/15;H01L29/40;H01L29/49;H01L29/76;H01L29/786;H01L31/036;H01L31/0376;H01L31/062;H01L31/112;H01L31/113;H01L31/20 |
主分类号 |
H01L29/04 |
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