发明名称 Memory system supporting input/output path swap
摘要 A memory system includes a controller having first and second input/output terminals, and first and second memory devices each having first and second input/output terminals. The system includes a path selection mechanism for selectively employing one of the first and second terminals of either the controller or the first memory device for communicating a first input/output signal between the controller and the first memory device, and employing the other one of the first and second terminals for communicating a second input/output signal between the controller and the first memory device. The path selection mechanism selectively employs the first and second terminals in accordance with data indicating which of the first and second terminals of the first memory device is connected to the first terminal of the controller and which of the first and second terminals of the first memory device is connected to the second terminal of the controller.
申请公布号 US8644084(B2) 申请公布日期 2014.02.04
申请号 US201113215293 申请日期 2011.08.23
申请人 PARK KWANG-SOO;SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK KWANG-SOO
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
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