发明名称 |
Semiconductor structure and method for manufacturing the same |
摘要 |
The present invention provides a method for manufacturing a semiconductor structure. The method can effectively reduce the contact resistance between source/drain regions and a contact layer by forming two contact layers of different thickness on the surfaces of the source/drain regions. Further, the present invention provides a semiconductor structure, which has reduced the contact resistance. |
申请公布号 |
US8642471(B2) |
申请公布日期 |
2014.02.04 |
申请号 |
US201113379658 |
申请日期 |
2011.02.27 |
申请人 |
YIN HAIZHOU;LUO JUN;ZHU HUILONG;LUO ZHIJIONG;THE INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCE |
发明人 |
YIN HAIZHOU;LUO JUN;ZHU HUILONG;LUO ZHIJIONG |
分类号 |
H01L29/78;H01L29/94 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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