发明名称 Semiconductor structure and method for manufacturing the same
摘要 The present invention provides a method for manufacturing a semiconductor structure. The method can effectively reduce the contact resistance between source/drain regions and a contact layer by forming two contact layers of different thickness on the surfaces of the source/drain regions. Further, the present invention provides a semiconductor structure, which has reduced the contact resistance.
申请公布号 US8642471(B2) 申请公布日期 2014.02.04
申请号 US201113379658 申请日期 2011.02.27
申请人 YIN HAIZHOU;LUO JUN;ZHU HUILONG;LUO ZHIJIONG;THE INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCE 发明人 YIN HAIZHOU;LUO JUN;ZHU HUILONG;LUO ZHIJIONG
分类号 H01L29/78;H01L29/94 主分类号 H01L29/78
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