发明名称 |
Memory device having three-dimensional gate structure |
摘要 |
Subject matter disclosed herein relates to a memory device, and more particularly to a nonvolatile memory device having a recess structure and methods of fabricating same. |
申请公布号 |
US8642442(B2) |
申请公布日期 |
2014.02.04 |
申请号 |
US20100869569 |
申请日期 |
2010.08.26 |
申请人 |
KIM NAM-KYEONG;CHOI JEONG-MIN;MICRON TECHNOLOGY, INC. |
发明人 |
KIM NAM-KYEONG;CHOI JEONG-MIN |
分类号 |
H01L29/788;H01L21/336 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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