发明名称 |
Nonvolatile memory with enhanced efficiency to address asymetric NVM cells |
摘要 |
This application describes embodiments of MRAM cells that utilize a PMOS transistor as an access transistor. The MRAM cells are configured to mitigate the effects of applying asymmetric current loads to transition a Magnetic-Tunnel Junction of the MRAM cell between magnetoresistive states. |
申请公布号 |
US8644055(B2) |
申请公布日期 |
2014.02.04 |
申请号 |
US20100963820 |
申请日期 |
2010.12.09 |
申请人 |
NEY ALEXANDRE;INFINEON TECHNOLOGIES AG |
发明人 |
NEY ALEXANDRE |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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