| 摘要 |
A system and a method for processing a substrate are provided to deposit a layer on a substrate or to etch the layer without exposing the substrate to the air by arranging a process chamber, an edge etch chamber, and a rear etching chamber at the outside of a transfer chamber. A load lock chamber(200) is for storing a substrate(10). At least one process chamber(300) is for forming a layer on the substrate, or etching the substrate or the layer on the substrate. An edge etching chamber(400) is for etching an edge region of the substrate. A transfer chamber(100) is for transferring the substrate. The load lock chamber, the process chamber, and the edge etching chamber are attached to the transfer chamber by an opening and shutting unit. Each internal space of the load lock chamber, the process chamber, and the etch etching chamber is separated from or communicated with an internal space of the transfer chamber by the opening and shutting unit. The edge etch chamber includes a stage unit, a shielding unit, and a plasma generating unit. An inspection chamber(500) for inspecting the substrate is attached to the transfer chamber. |
