| 发明名称 |
Methods for depositing a material atop a substrate |
| 摘要 |
Methods for depositing a material atop a substrate are provided herein. In some embodiments, a method of depositing a material atop a substrate may include exposing a substrate to a silicon containing gas and a reducing gas; increasing a flow rate of the silicon containing gas while decreasing a flow rate of the reducing gas to form a first layer; and depositing a second layer atop the first layer. |
| 申请公布号 |
US8642376(B2) |
申请公布日期 |
2014.02.04 |
| 申请号 |
US201213470768 |
申请日期 |
2012.05.14 |
| 申请人 |
CHATTERJEE SUKTI;LAKSHMANAN ANNAMALAI;CRUZ JOE GRIFFITH;NARWANKAR PRAVIN K.;APPLIED MATERIALS, INC. |
发明人 |
CHATTERJEE SUKTI;LAKSHMANAN ANNAMALAI;CRUZ JOE GRIFFITH;NARWANKAR PRAVIN K. |
| 分类号 |
H01L21/00;H01L21/20;H01L21/322;H01L21/36 |
主分类号 |
H01L21/00 |
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