发明名称 |
Method for fabricating monolithic two-dimensional nanostructures |
摘要 |
A patterning method for the creation of two-dimensional nanowire structures. Nanowire patterning methods are used with lithographical patterning approaches to form patterns in a layer of epoxy and resist material. These patterns are then transferred to an underlying thin film to produce a two-dimensional structure with desired characteristics. |
申请公布号 |
US8641912(B2) |
申请公布日期 |
2014.02.04 |
申请号 |
US20080125043 |
申请日期 |
2008.05.21 |
申请人 |
HEATH JAMES R.;WANG DUNWEI;BUNIMOVICH YURI;BOUKAI AKRAM;CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
HEATH JAMES R.;WANG DUNWEI;BUNIMOVICH YURI;BOUKAI AKRAM |
分类号 |
C23F1/00;B44C1/22 |
主分类号 |
C23F1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|