发明名称 Fabrication method of semiconductor integrated circuit device
摘要 Productivity is to be improved in assembling a semiconductor integrated circuit device. A matrix substrate is provided and semiconductor chips are disposed on a first heating stage, then the matrix substrate is disposed above the semiconductor chips on the first heating stage, subsequently the semiconductor chips and the matrix substrate are bonded to each other temporarily by thermocompression bonding while heating the chips directly by the first heating stage, thereafter the temporarily bonded matrix substrate is disposed on a second heating stage adjacent to the first heating stage, and then on the second heating stage the semiconductor chips are thermocompression-bonded to the matrix substrate while being heated directly by the second heating stage.
申请公布号 US8640943(B2) 申请公布日期 2014.02.04
申请号 US201213607864 申请日期 2012.09.10
申请人 MAKI HIROSHI;TANI YUKIO;RENESAS ELECTRONICS CORPORATION 发明人 MAKI HIROSHI;TANI YUKIO
分类号 B23K31/02;H01L21/60;H01L21/50;H01L21/52;H01L21/56;H01L21/58;H01L23/31 主分类号 B23K31/02
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