发明名称 |
Low temperature junction growth using hot-wire chemical vapor deposition |
摘要 |
A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device. |
申请公布号 |
US8642450(B2) |
申请公布日期 |
2014.02.04 |
申请号 |
US20070742001 |
申请日期 |
2007.11.09 |
申请人 |
WANG QI;PAGE MATTHEW;IWANICZKO EUGENE;WANG TIHU;YAN YANFA;ALLIANCE FOR SUSTAINABLE ENERGY, LLC |
发明人 |
WANG QI;PAGE MATTHEW;IWANICZKO EUGENE;WANG TIHU;YAN YANFA |
分类号 |
H01L21/20;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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