发明名称 Low temperature junction growth using hot-wire chemical vapor deposition
摘要 A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.
申请公布号 US8642450(B2) 申请公布日期 2014.02.04
申请号 US20070742001 申请日期 2007.11.09
申请人 WANG QI;PAGE MATTHEW;IWANICZKO EUGENE;WANG TIHU;YAN YANFA;ALLIANCE FOR SUSTAINABLE ENERGY, LLC 发明人 WANG QI;PAGE MATTHEW;IWANICZKO EUGENE;WANG TIHU;YAN YANFA
分类号 H01L21/20;H01L21/36 主分类号 H01L21/20
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