发明名称 |
Method of producing conductive thin film |
摘要 |
An embodiment of this invention provides a method to produce a conductive thin film, which comprises: providing a substrate; forming a first metal oxide layer on the substrate; forming an indium-free metal layer on the first metal oxide layer; and forming a second metal oxide layer on the indium-free layer, wherein the first metal oxide layer, the indium-free metal layer, and the second oxide layer are all solution processed. |
申请公布号 |
US8642377(B2) |
申请公布日期 |
2014.02.04 |
申请号 |
US201113110862 |
申请日期 |
2011.05.18 |
申请人 |
LIN CHING-FUH;LIN MING-SHIUN;NATIONAL TAIWAN UNIVERSITY |
发明人 |
LIN CHING-FUH;LIN MING-SHIUN |
分类号 |
H01L21/00;H01L21/3205;H01L21/44;H01L21/4763 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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