发明名称 Method of producing conductive thin film
摘要 An embodiment of this invention provides a method to produce a conductive thin film, which comprises: providing a substrate; forming a first metal oxide layer on the substrate; forming an indium-free metal layer on the first metal oxide layer; and forming a second metal oxide layer on the indium-free layer, wherein the first metal oxide layer, the indium-free metal layer, and the second oxide layer are all solution processed.
申请公布号 US8642377(B2) 申请公布日期 2014.02.04
申请号 US201113110862 申请日期 2011.05.18
申请人 LIN CHING-FUH;LIN MING-SHIUN;NATIONAL TAIWAN UNIVERSITY 发明人 LIN CHING-FUH;LIN MING-SHIUN
分类号 H01L21/00;H01L21/3205;H01L21/44;H01L21/4763 主分类号 H01L21/00
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