发明名称 Multi-layer memory structure for behavioral modeling in a pre-distorter
摘要 A method and system for modeling distortion of a non-linear electronic device are disclosed. According to one aspect, the invention provides a layered memory structure that includes a plurality of memory structure layers. Each memory structure layer has an input to receive an input signal and has a memory function. Each memory function has at least one delay element that provides a pre-determined delay of the input signal of the memory structure layer. The pre-determined delay is different for each of at least two memory structure layers and is based at least in part on an evaluation period corresponding to the memory structure layer.
申请公布号 US8645884(B2) 申请公布日期 2014.02.04
申请号 US201213492190 申请日期 2012.06.08
申请人 BAI CHUNLONG;TELEFONAKTIEBOLAGET L M ERICSSON (PUBL) 发明人 BAI CHUNLONG
分类号 G06F9/455;G06F17/50 主分类号 G06F9/455
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