CONTROLLING THE VOLTAGE LEVEL ON THE WORD LINE TO MAINTAIN PERFORMANCE AND REDUCE ACCESS DISTURBS

摘要

A semiconductor memory for storing data includes the memory cells for storing data including an access control device for providing access for a data access port or separation from a data access port to the memory cell in response to an access control signal. An access control circuit transmits the access control signal along one of the access control lines and controls the access control devices connected among the access control lines. The access control circuit includes an access transfer circuit for connecting to a power source for supplying the selected access control line with a predetermined access voltage level and a feedback circuit for giving feedback on the change of the voltage on the access control line to the access transfer circuit. The access control circuit accesses the selected memory cell connected to the selected access control line in response to a data access request signal; controls the access transfer circuit to change the voltage level on the access control line to the predetermined access voltage level with a first speed; provides an low impedance access between the power source and the access control line; changes the voltage level on the access control line in order to direct the access voltage level with a slower second speed than a first speed in response to a feedback signal for indicating the acquisition of the predetermined value in the access control line voltage; and provides a high impedance access between the power source and the access control line by controlling the access control transfer circuit. [Reference numerals] (12) Memory cells; (20) Select; (32) Control