发明名称 |
Circuits, systems, and methods for reducing simultaneous switching output noise, power noise, or combinations thereof |
摘要 |
Memory devices and methods are provided for reducing simultaneous switching output noise and power supply noise during burst data write and refresh operations. An embodiment of a memory device according to the present invention includes a first power domain coupled to some of the components of the memory device and a second power domain coupled to different components of the memory device. One or more distributed power domain coupling circuits may be coupled to the first and second power domains. The power domain coupling circuit includes a controller configured to generate an enable signal responsive to control signals, data signals, or any combination thereof. The power domain coupling circuit also includes coupling circuitry coupled to the first and second power domains and coupled to the controller. The coupling circuitry is configured to couple the first and second power domains together responsive to the enable signal. |
申请公布号 |
US8644103(B2) |
申请公布日期 |
2014.02.04 |
申请号 |
US201113018702 |
申请日期 |
2011.02.01 |
申请人 |
MA YANTAO;MERRITT TODD;MICRON TECHNOLOGY, INC. |
发明人 |
MA YANTAO;MERRITT TODD |
分类号 |
G11C7/02 |
主分类号 |
G11C7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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