发明名称 Current detection circuit for a power semiconductor device
摘要 A current detection circuit for a power semiconductor device utilizes a sense function of the power semiconductor device. The magnitude of current flowing in power semiconductor devices 1, 11 is detected by a current-voltage conversion circuit 24 connected to sense terminals S, S of the power semiconductor devices. The detected signal is delivered to a current direction detection circuit 27, which detects the direction of the current and delivers the detected current direction signal to an external CPU 3, which in turn gives gain-setting and offset-setting signals corresponding to the current direction signal. An output gain adjuster 221 adjusts the magnitude of gain and an output offset adjuster 231 adjusts the magnitude of offset to correct for differences between the characteristics of the sense regions and the main regions of the power semiconductor devices.
申请公布号 US8644038(B2) 申请公布日期 2014.02.04
申请号 US201113278957 申请日期 2011.10.21
申请人 SASAKI MASAHIRO;FUJI ELECTRIC CO., LTD. 发明人 SASAKI MASAHIRO
分类号 H02H7/122 主分类号 H02H7/122
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