| 摘要 |
According to the present invention, there is provided a method for manufacturing an SOI substrate based on a bonding method, comprising at least:
forming a silicon oxide film on a surface of at least one of a single-crystal silicon substrate that becomes an SOI layer and a single-crystal silicon substrate that becomes a support substrate; bonding the single-crystal silicon substrate that becomes the SOI layer to the single-crystal silicon substrate that becomes the support substrate through the silicon oxide film;
and performing a heat treatment for holding at a temperature falling within the range of at least 950°C to 1100°C and then carrying out a heat treatment at a temperature higher than 1100°C when effecting a bonding heat treatment for increasing bonding strength As a result, there are provided the method for manufacturing an SOI substrate that can efficiently manufacture an SOI substrate having an excellent gettering ability with respect to metal contamination in an SOI layer, and the SOI substrate. |
