| 摘要 |
PROBLEM TO BE SOLVED: To improve connectivity between a semiconductor chip and a bonding wire to improve reliability of a semiconductor device.SOLUTION: A semiconductor device comprises: a re-wiring layer W1 composed of a Cu film C1, a Ni film N1 and a Pd film P1 formed in this order from a semiconductor substrate SB side, in which the Pd film P1 on an uppermost surface is used as an electrode pad; and a bonding wire BW which is composed of Cu and connected to a top face of the Pd film P1. Here, a film thickness of the Pd film P1 is made thinner than a film thickness of the Ni film N1, the film thickness of the Ni film N1 is made thinner than that of the Cu film C1. The Cu film C1, the Ni film N1 and the Pd film P1 are formed in the same pattern shape in plan view. |
