| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method which can cause microphase separation of various induced self-organization materials properly.SOLUTION: An underlying layer L1 is formed to cover the upper surface of a substrate W, and a guide pattern L2 is formed on the underlying layer L1. In a region on the underlying layer L1 where the guide pattern L2 is not formed, a DSA film L3 composed of two kinds of polymers is formed. While supplying a solvent to the DSA film L3 on the substrate W, the DSA film L3 is heat treated. Consequently, microphase separation of the DSA film L3 takes place. As a result, pattern P1 consisting of one polymer and pattern P2 consisting of the other polymer are formed. The pattern P2 is removed by subjecting the DSA film L3 sequentially to exposure processing and development processing after the microphase separation. |
