发明名称 |
SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To allow for compatibility between smear suppression and good transfer characteristics.SOLUTION: A solid-state imaging element comprises a semiconductor substrate and a plurality of pixel units provided on the semiconductor substrate. The pixel unit comprises: a photoelectric conversion unit which generates an electric charge on the basis of incident light; a memory unit which stores the generated electric charge; a light-shielding unit which shields at least the memory unit; an excavated part excavated in the semiconductor substrate between the photoelectric conversion unit and the memory unit and formed of a light-shielding material; and a transfer unit which transfers the electric charge from the photoelectric conversion unit to the memory unit when a channel for transfer is formed in the excavated part. This technique is applicable to an electronic device with an imaging function. |
申请公布号 |
JP2014022421(A) |
申请公布日期 |
2014.02.03 |
申请号 |
JP20120157072 |
申请日期 |
2012.07.13 |
申请人 |
SONY CORP |
发明人 |
ARAKAWA SHINICHI |
分类号 |
H01L27/146;H04N5/359;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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