发明名称 SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To allow for compatibility between smear suppression and good transfer characteristics.SOLUTION: A solid-state imaging element comprises a semiconductor substrate and a plurality of pixel units provided on the semiconductor substrate. The pixel unit comprises: a photoelectric conversion unit which generates an electric charge on the basis of incident light; a memory unit which stores the generated electric charge; a light-shielding unit which shields at least the memory unit; an excavated part excavated in the semiconductor substrate between the photoelectric conversion unit and the memory unit and formed of a light-shielding material; and a transfer unit which transfers the electric charge from the photoelectric conversion unit to the memory unit when a channel for transfer is formed in the excavated part. This technique is applicable to an electronic device with an imaging function.
申请公布号 JP2014022421(A) 申请公布日期 2014.02.03
申请号 JP20120157072 申请日期 2012.07.13
申请人 SONY CORP 发明人 ARAKAWA SHINICHI
分类号 H01L27/146;H04N5/359;H04N5/374 主分类号 H01L27/146
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