| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which facilitates processing of a bit line.SOLUTION: A semiconductor device manufacturing method comprises the processes of: forming in a semiconductor substrate 111, a gate electrode 181 embedded in a groove extending in a first direction, and forming diffusion layers 141 on the semiconductor substrate 111 on both sides of the gate electrode 181; forming a conductive film on the semiconductor substrate 111; forming a conductive layer which is connected to one of the diffusion layers 141 and extends in the first direction by patterning the conductive film; forming an insulation film on the semiconductor substrate 111 including a top of the conductive layer; removing a part of the conductive layer and a part of the insulation film in a second direction which crosses the first direction to leave a columnar conductive layer 231c2 and expose the other of the diffusion layers 141; forming wiring connected to the other of the diffusion layers 141; and forming a capacitor connected to the columnar conductive layer 231c2. |
