发明名称 WAFER ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a wafer etching method capable of etching the surface to be etched of a wafer to a uniform state.SOLUTION: A wafer etching method comprises the steps of: rotatably holding a wafer by a rotation holding device 10; and supplying an etchant to at least a central part of a wafer 1 by etchant supply means 20 and etching the wafer 1 by rotating it. The etching step etches an outer periphery of the wafer 1 at a higher temperature than a temperature of the central part of the wafer 1.
申请公布号 JP2014022678(A) 申请公布日期 2014.02.03
申请号 JP20120162428 申请日期 2012.07.23
申请人 DISCO ABRASIVE SYST LTD 发明人 WATANABE SHINYA;INOUE YUKI;ITO KEIGO;NISHIDA YOSHITERU
分类号 H01L21/306 主分类号 H01L21/306
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