| 摘要 |
PROBLEM TO BE SOLVED: To enable formation of ribbon-shaped graphene more efficiently and with excellent controllability.SOLUTION: An SiC substrate 101 is heated to partially evaporate hydrogen 103 binding to silicon atoms, so that graphene 104 is partially turned back to a state of a buffer layer 102. Accordingly, a nano-sized strip-shaped graphene nano ribbon 105 is formed partially aligned in a direction along a crystal orientation on a surface of the SiC substrate 101. For instance, in a treatment chamber of a heating furnace, heating is carried out in a condition of a vacuum at a pressure of 133.322×10Pa, at 670°C for 2 hours, so that part of hydrogen 103 is evaporated. |
