METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

The present invention provides a method for manufacturing a semiconductor device which reduces a capacitive coupling phenomenon between a gate and a source and/or a drain by forming a gate spacer using an air gap and a material whose a dielectric constant is low in a gate last structure. The method for manufacturing a semiconductor device forms a dummy gate pattern on a substrate and forms a spacer arranged on a sidewall of the dummy gate pattern and forms an air gap on both sides of the dummy gate pattern by eliminating the spacer. The method for manufacturing a semiconductor device exposes the substrate by eliminating the dummy gate pattern and sequentially forms a gate insulation film including a high dielectric constant insulation film and a metal gate electrode on the exposed substrate.