ETCHING METHOD, SEMICONDUCTOR SUBSTRATE PRODUCT AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD USING THE SAME, AND ETCHANT PREPARATION KIT

摘要

PROBLEM TO BE SOLVED: To provide an etching method of a semiconductor substrate which resolves a decrease in activity of an etchant due to aging and enables excellent wet etching of a Ti-containing layer; and provide manufacturing methods of a semiconductor substrate product and a semiconductor element, and etchant preparation kit.SOLUTION: In an etching method of a semiconductor substrate, when etching a Ti-containing layer of the semiconductor substrate by applying an etchant of pH 8.5-14 is to the Ti-containing layer, the etchant is prepared by mixing a first solution containing a basic compound with a second solution containing an oxidant, and after mixing, the etchant is applied to the semiconductor substrate.