| 摘要 |
PROBLEM TO BE SOLVED: To inhibit an influence of parasitic capacitance formed between wiring and a cap substrate, which is caused because the wiring provided on a top face of an insulation film on the cap substrate faces a top face of the cap substrate across the insulation film on the cap substrate.SOLUTION: In a semiconductor device having a base substrate on which an electrode is provided on a top face and a cap substrate with an undersurface being bonded to the top face of the base substrate, on which an insulation film is provided on a top face, a through hole which pierces the insulation film and the cap substrate from the top face of the insulation film to reach an electrode of the base substrate is formed. The through hole includes a through electrode having a via which lies along an inner surface of the through hole with a bottom edge being connected with an electrode and an upper edge extending to the top face of the insulation film, and a lid which contact the upper edge of the via and closes the through hole so as to form a cavity inside the through hole. On a top face of the lid, a wire is bonded and the wire is connected to the lid at a part located above the cavity. |
