发明名称 UPPER ELECTRODE AND PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To enable the temperature of an upper electrode to be kept uniform in a plasma processing apparatus.SOLUTION: An upper electrode 4 which is disposed so as to confront a susceptor 24 provided in a processing chamber 21 has a plate-like member 41 and an electrode portion 42. A gas flow hole 43a through which processing gas used for plasma processing is made to flow is formed in the plate-like member 41. Silicon is spray-coated onto a surface at the flow-out side of the gas flow hole 43a of the plate-like member 41 to form the electrode portion 42 like a membrane.
申请公布号 JP2014022517(A) 申请公布日期 2014.02.03
申请号 JP20120158841 申请日期 2012.07.17
申请人 TOKYO ELECTRON LTD 发明人 SAITO MICHISHIGE
分类号 H01L21/3065 主分类号 H01L21/3065
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