发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can form surface layers on necessary places on a die pad and leads with good accuracy and good efficiency; and provide a semiconductor device obtained by the manufacturing method.SOLUTION: A semiconductor device manufacturing method comprises: forming on one surface side of a substrate 20, a resist pattern layer 25 having resist bodies 25a corresponding to parts except formation places of leads 3; subsequently forming a lead part 13 on a surface of the substrate 20 exposed from the resist pattern layer 25; subsequently forming on the resist pattern layer 25 and on the lead part 13, a resist pattern layer 36 having resist bodies 36a corresponding to parts except a formation place of a surface layer 12; forming the leads 3 by forming the surface layer 12 by lamination on a part of the surface of the lead part 13, which is exposed from the resist pattern layer 36; subsequently removing the resist pattern layer 25 and the resist pattern layer 36 from the substrate 20; subsequently electrically connecting a semiconductor element 2 and the surface layer 12 of the leads 3; forming a resin encapsulated body 7 by molding the semiconductor element 2 and the leads 3 with an encapsulation resin 38; and subsequently removing the substrate 20.
申请公布号 JP2014022582(A) 申请公布日期 2014.02.03
申请号 JP20120160218 申请日期 2012.07.19
申请人 HITACHI MAXELL LTD 发明人 NAKAGAWA HIROSHI
分类号 H01L23/50;H01L21/56;H01L23/14 主分类号 H01L23/50
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