| 摘要 |
PROBLEM TO BE SOLVED: To allow for manufacturing of a nitride semiconductor device composed of a lamination structure of a nitride semiconductor at low cost in a state in which a substrate shape can be easily controlled and there is a small number of transitions.SOLUTION: First, a semiconductor laminate structure 103 and a first substrate 101 are separated by a separation layer 102 (fourth step). Next, a third substrate 105 is stuck to the separation layer 102 remaining in the semiconductor laminate structure 103 (fourth step). Then, a second substrate 104 is peeled from the semiconductor laminate structure 103 (fifth step). Last, a nitride semiconductor device is manufactured from the semiconductor laminate structure 103 disposed on the third substrate 105 (sixth step). |
