| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which can prevent contamination of an end face on an emission side of laser beams, which causes deterioration in laser characteristics even when a package of low air tightness is adopted.SOLUTION: A nitride semiconductor laser element 10 comprises: a plurality of semiconductor layers including an n-type clad layer 103 formed on a substrate 101, an active layer 105 and a p-type clad layer 108; a p-side electrode 112 and an n-side electrode 113; a ridge part 110 serving as a stripe-shaped waveguide 110; an end face 130A on a light emitting side and on an end face 130H on a light reflecting side which are formed on ends of the semiconductor layer in parallel with a lamination direction of the semiconductor layers; first end face coats 120, 121 which are provided on the end faces 130A, 130H at two places, respectively, and which are composed of dielectric substances; and a conducive second end face coat 122 which is provided on the first end face coat 120 of the emitting-side end face 130A and electrically connected to both of the p-side electrode 112 and the n-side electrode 113. |
