METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that has a tensile strength of 5 N/mmor more.SOLUTION: Before a process of forming a laminated wafer 40, a surface treatment process is performed in which one surface of a sensor wafer 14a and one surface of a cap wafer 20a are irradiated with a plasma gas that is obtained by turning a humidified gas into plasma. In this surface treatment process, the humidified gas whose humidity is 5% or higher and lower than 60% is used.