| 摘要 |
PROBLEM TO BE SOLVED: To improve the accuracy of extracting parasitic resistance in a field effect transistor.SOLUTION: A parasitic resistance extraction device comprises: an S parameter measurement unit 100 which, while changing a gate-source voltage Vunder drain-source voltage V=0 conditions, measures the S parameter of a HEMT or MOSFET which is the field effect transistor of concern; an impedance matrix conversion unit 101 for converting the S parameter into an impedance matrix [Z] to find the real part of impedance, Re{Z}; and an arithmetic unit 102 which, when gate resistance, source resistance, and fitting parameters are defined as R, R, and G, V respectively, determines the gate resistance R, the source resistance R, and the fitting parameters G, V by a least square method so that Re{Z} obtained from a prescribed relational expression and Re{Z} found by the impedance matrix conversion unit 101 will match. |
