SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a technique for excellently processing a substrate while spreading a processing liquid over the substrate fast by improving the flow velocity of the processing liquid on a surface of the substrate.SOLUTION: A substrate processing apparatus 1 includes a disk part 21 having an opposite surface 23 which faces a surface of a wafer W held by a spin chuck 2 at an interval GA1 and also comes into contact with a liquid film formed on the wafer when the wafer W is processed with the processing liquid. A radius R10 of the opposite surface 23 is determined based upon a thickness component of a liquid film LF1 formed on the wafer W rotated by the spin chuck 2 by supplying the processing liquid from a discharge port 26 in the absence of the disk part 21. When the thickness component H is differentiated with a horizontal distance D, a position where the differentiating value changes from an increase to a decrease is defined as a first inflection position (D11). The opposite surface 23 extends from nearby the center of rotation of the wafer W at least to the first inflection position.